The insulated-gate bipolar transistor (IGBT) unit is noted for combining high efficiency and fast switching. Its basic circuit design is specified for a current source parallel tuned load. Designed for heating applications in the frequency range of 10 to 60 kHz. Power ratings can exceed 1 megawatt.
This unit is a controlled current source power supply with a parallel tuned circuit. Designed for heating applications in the frequency range of 150 to 10,000 Hz. Provides a wide range of power levels from 50 to 400kW.
This unit’s basic circuit design is specified for a current source parallel tuned load. Designed for heating applications in the frequency range of 70 to 400 kHz. Power ratings are 50 to over 1 megawatt at 100 to 400 kHz.
The voltage source series tuned insulated-gate bipolar transistor (IGBT) power supply is noted for combining high efficiency and fast switching. Designed for heating applications in the frequency range of 6 to 60 kHz. Provides high voltage for high impedance loads.
The MOS transistor inverter acts as a current generator to a parallel resonance circuit. Designed to work as a high frequency 100 to 400 kHz converter. Power ratings at 2, 3, 6, and 12 kW.
Our transistor inverter is a 10 to 400 kHz high-frequency power supply. It acts as a current source supplying a parallel resonant circuit.
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